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On the Uniqueness and Sensitivity of Nanoindentation Testing for Determining Elastic and Plastic Material Properties of Electroplating Copper Filled in Through-Silicon-Via (TSV)

机译:确定通过硅通孔(TSV)填充的电镀铜的弹性和塑性材料性能的纳米压痕测试的唯一性和敏感性

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Through-Silicon-Vias (TSV) for 3D integration are susceptible to mechanical failures such as TSV extrusion, chip cracking, and carrier mobility change, mainly due to significant thermal mismatch between electroplating copper and silicon wafer. Assessing TSV reliability requires accurate mechanical properties of electroplating Cu, which may not be achieved by traditional testing methods for large-size samples. Alternatively, nanoindentation can be used as a versatile and non-destructive technique to obtain material properties at micro-scale or nan-scale. The technique, however, is sensitive to experimental data variation and may yield non-unique properties, which is not yet fully understood for TSV-Cu and other packaging materials. This paper reports the results and analysis of in-situ nanoindentation for TSV-Cu specimens. Each specimen has a diameter of 20 um and a depth of 180 um, fabricated on a 200-mm silicon wafer. The relationship of power-law hardening was used to characterize the mechanical behaviors of TSV-Cu with Young's modulus (E), yielding strength (Y), and strain hardening exponent (n). To extract these properties, two methods of so-called reverse analysis were applied to experimental test data. Finite element models were also built to reproduce the displacement-loading curve based on the extracted material properties. The following results were observed: 1) with very different yield strength and hardening coefficient, identical load-displacement curves were produced. This indicates that single indentation testing cannot provide unique material properties for TSV-Cu; 2) the loading-displacement curves vary with the locations of the specimens, possibly due to the effect of grain size on nanoindentation, or experimental "errors"; 3) the plastic properties can vary dramatically with a slight change in the loading-displacement curve. This implies the sensitivity of extracted properties on experimental data variations. Generally, the non-uniqueness and sensitivity due to experimental data variations of nanoindentation testing are not independent. This study concludes that single nanoindentation testing itself may not be able to adequately and uniquely determine the material properties of TSV-Cu. To make the best use of the nanoindentation technique, a robust methodology is needed to minimize the sensitivity to experimental errors and analysis.
机译:用于3D集成的硅通孔(TSV)易受机械故障(例如TSV挤压,芯片开裂和载流子迁移率变化)的影响,这主要是由于电镀铜和硅晶片之间存在明显的热失配。评估TSV的可靠性需要电镀铜的准确机械性能,而传统的大型样品测试方法可能无法实现。可替代地,纳米压痕可以用作通用且非破坏性的技术,以获得微米级或纳米级的材料特性。但是,该技术对实验数据的变化很敏感,并且可能会产生非唯一的特性,这对于TSV-Cu和其他包装材料尚不完全清楚。本文报道了TSV-Cu标本的原位纳米压痕的结果和分析。每个样本的直径为20 um,深度为180 um,制作在200毫米的硅片上。幂律硬化的关系用于表征TSV-Cu的力学行为,其杨氏模量(E),屈服强度(Y)和应变硬化指数(n)。为了提取这些特性,将两种所谓的反向分析方法应用于实验测试数据。还建立了有限元模型,以基于提取的材料特性来再现位移-载荷曲线。观察到以下结果:1)在屈服强度和硬化系数非常不同的情况下,产生了相同的载荷-位移曲线。这表明单压痕测试不能为TSV-Cu提供独特的材料性能。 2)加载-位移曲线随样品位置的变化而变化,这可能是由于晶粒尺寸对纳米压痕或实验“误差”的影响所致; 3)随负载-位移曲线的轻微变化,塑性会发生巨大变化。这意味着提取的属性对实验数据变化的敏感性。通常,由于纳米压痕测试的实验数据变化而引起的非唯一性和敏感性不是独立的。这项研究得出的结论是,单个纳米压痕测试本身可能无法充分,唯一地确定TSV-Cu的材料性能。为了充分利用纳米压痕技术,需要一种可靠的方法来最小化对实验误差和分析的敏感性。

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