Modeling of Memristors Under Sinusoidal Excitations with Various Frequencies

摘要

The problem of memristors modeling is investigated. The elements under study are self-directed-channel memristors with a tungsten dopant fabricated by the Knowm Inc. Memristors are exited using a sinusoidal waveform. Three memristor models are considered: the asymmetric Strukov model, the Strukov model with the Biolek window, and the VTEAM model. Parameters of the models are fitted to experimental data using the interior-point optimization algorithm. The possibility of modeling memristor's behavior in a wide frequency range using the models considered is studied.