Tight relationship among field failure rate, single event burn-out (SEB) and cold bias stability (CBS) as a cosmic ray endurance for IGBT and diode

摘要

The applied voltage (Vcc) dependence of SEB characteristics of the Failure In Time (FIT) is generally estimated by the accelerated test, because it takes a long time to cause SEB under the natural condition. So, it is meaningful to confirm the relationship among Field Failure Rate (FFR), SEB, FIT and CBS characteristic. Through physical analysis, the destruction point is confirmed to be located around the electric field peak position during SEB experiment using the neutron irradiation. After both SEB curve fitting and sufficient numbers of analysis for the destruction points, the first major factor to characterize the SEB curve is confirmed to be the electric field strength.