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Characterization of sub-10 nm filter cleanliness by electrophoretic purification and analysis

机译:电泳纯化和分析表征低于10 nm的滤光片清洁度

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The cleanliness and particle removal requirements on filtration for the semiconductor industry continue to increase in order to keep pace with the development of sub-10nm devices. However, there has been a lack of available instrumentation to directly measure the particles and low levels of "killer" defects that are detrimental to final device function. To address this issue, an electrophoretic particle capture device has been used in order to test its ability to capture and characterize sub-10 nm particles. Using an electrode, a variable electric field is applied to a process stream that results in the capture and subsequent release of particles. The release of particle creates a measurable current that can be correlated to the amount of contamination in a system. In this case we apply the technique to the evaluation of a cleaning method for next generation filtration products developed specifically for the microelectronics industry. We are able to demonstrate that the cleaning method used has a significant impact on the cleanliness of the filter and that the new technique has the ability to effectively characterize its state of cleanliness.
机译:半导体行业对过滤的清洁度和去除颗粒的要求不断提高,以跟上10纳米以下器件的发展步伐。但是,缺少可用于直接测量颗粒的有害仪器,以及对最终设备功能有害的低水平的“杀手”缺陷。为了解决这个问题,已使用电泳粒子捕获设备来测试其捕获和表征10 nm以下粒子的能力。使用电极,将可变电场施加到工艺流,导致捕获和随后释放颗粒。粒子的释放会产生可测量的电流,该电流可与系统中的污染量相关。在这种情况下,我们将该技术应用于为微电子行业专门开发的下一代过滤产品的清洁方法的评估。我们能够证明所使用的清洁方法对过滤器的清洁度有重大影响,并且该新技术具有有效表征其清洁度状态的能力。

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