Design and Implementation of Broadband Solid State SC-Band High Power Amplifier

摘要

This paper presents the design and fabrication of a broadband high power amplifier from 2 to 6 GHz. The high power amplifier is implemented by combining several medium power GaN technology amplifiers to achieve 50 dBm output power. The architecture of the SC-band power amplifier consists of four power-lines, including a high power amplifier and a medium power amplifier as the input driver amplifier. Moreover, power combiners are used at the output of these lines. The designed power amplifier is then fabricated on a synthetic substrate for both high and low power sections. The measurement results show that the proposed design achieves 10 % to 28 % power added efficiency and 48 dBm to 51 dBm output power from 2 to 6 GHz.