Strongly Electronic-Correlated Material for Ultrafast Electronics Application

摘要

Strongly electronic-correlated material as VO₂ has been investigated for ultrafast electronic applications due to their rapid and reversible Metal-Insulator transition. In this paper we report the design, simulation and fabrication of V_O2-based RF-switches in two configurations (shunt and series). In order to achieve this goal thin layers of VO₂ have been integrated with coplanar waveguides for the fabrication of microwave switches with thermally activated ON/OFF states. The MOCVD VO₂ films were grown on sapphire substrates and have been characterized by XRD, AFM and Raman spectroscopy. The modeling and simulation results have been found to be in good agreement with the experimental RF measurements.