Normally-Off Fluoride-Based Plasma Treatment AlGaN/GaN HEMTs with Maximum fT and fmax of 61GHz/130GHz Using TiN-Based Source Ledge

摘要

Normally-off thin barrier AlGaN/GaN high mobility electron transistors (HEMTs) with a gate length of 0.1μ m have been fabricated on a SiC substrate. The use of fluoride-based plasma treatment combined with TiN-based source ledge produced the normally-off device exhibits a threshold voltage of 0.6V, a saturation drain current density of 845mA/mm at a gate bias of 3V, a peak trans-conductance of 412mS/mm, a current-gain cutoff frequency (fT) of 61GHz, and a maximum oscillation frequency (fmax) of 130GHz. A high trans-conductance (gm) and frequency performance E-mode AlGaN/GaN HEMTs were achieved by TiN-based source ledge.