3D AND-type NVM for In-Memory Computing of Artificial Intelligence

摘要

We introduce a novel 3D AND-type NVM suitable for in-memory computing for AI applications. The structure resembles our SGVC 3D NAND, but we introduce a vertical buried diffusion (BD) line that connects all transistors in parallel in the same trench of a 3D AND-type array. The 3D AND-type array readily enables the summation of currents from plural BL's (or WL's) to provide "vector matrix multiplications", or often called "MAC" in AI. Because all the weights are stored in the high-density NVM and current sensing of memory cells already provides MAC operation, the in-memory computing with NVM provides a way to eliminate the need of moving data from DRAM and SRAM through buses or chip I/Os, thus this is ideal for AI computing. This device has potential to provide high-density, low-power, and high-throughput hardware solutions to accelerate the AI computing.