The Application of Gate-Drain underlap Architecture in TFET-based Inverters

摘要

In this paper, an L-shape tunnel field-effect transistor (LTFET) with gate-drain underlap (GDU-LTFET) is proposed to suppress the ambipolar behavior effectively and to optimize the TFET inverter circuit. As the GDU architecture changes the energy band of the junction between the channel region and the drain region, the GDU-LTFET has lower band-to-band tunneling (BTBT) rate compared with LTFET in the off-state, which helps to reduce static power consumption of TFET digital circuit. The simulation results show that the noise margin, voltage gain and static power consumption in the GDU-LTFET inverter perform better compared with that in the LTFET inverter.