A study of OFF-state Current and Impact of Dielectric Constant on ION/IOFF ratio of Carbon Nanotube Field Effect Transistor

摘要

This paper deals with three key non-ballistic effects of carbon nanotube field effect transistor (CNT-FET) and also shows the significance of band bending and tunneling effect on off-state current of the device. A high dielectric material for gate insulator has been proposed because it enhances electrostatic control and reduces the short channel effects. Thus, by using higher dielectric materials, a significant reduction in IOFF takes place. As a result, ION/IOFF ratio also increases. The effect of temperature has also been discussed throughout the work.