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A broadband hybrid GaN cascode low noise amplifier for WiMax applications

机译:用于WiMax应用的宽带混合GaN共源共栅低噪声放大器

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This paper presents a design of a 3.5 GHz GaN Low Noise Amplifier (LNA) using Microstrip interconnect technology on a gold plated PCB and using packaged commercial GaN-on-SiC HEMTs. Cascode configuration with inter-stage matching and independent biasing networks was used. The whole design was fully implemented using Microstrip except for the capacitors and was optimized to reduce the noise figure (NF) and improve the gain and stability. The LNA provided a gain of 13.5 dB with a noise figure (NF) less than 3dB from 2.9 to 3.7 GHz with power consumption 2.92W.
机译:本文介绍了一种3.5 GHz GaN低噪声放大器(LNA)的设计,该放大器在镀金PCB上使用Microstrip互连技术并使用封装的商用GaN-on-SiC HEMT进行了设计。使用具有级间匹配和独立偏置网络的Cascode配置。除电容器外,整个设计均使用Microstrip完全实现,并进行了优化以降低噪声系数(NF)并提高增益和稳定性。 LNA的增益为13.5 dB,噪声系数(NF)在2.9至3.7 GHz范围内小于3dB,功耗为2.92W。

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