HfO2/RuO2 Interface Mediated Oxygen Balance in Memristor: An Ab Initio Study

摘要

In this paper, the microscopic mechanisms of the transition metal oxides/RuO2 memristor showing great performance in the recent advances were presented using ab initio theoretical methods. The calculations of oxygen vacancy formation, the Schottky barrier height, and the migration barriers for the HfO2/RuO2 interface model suggest that there is mediated oxygen balance at the interface which contributes to the improvement of the device.