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Preparation of characterization of Sol-Gel derived BaTi5O11 dielectric thin films

机译:Sol-Gel衍生的BaTi5O11介电薄膜的表征制备

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BaTi5O11 thin films with single-layer thicknesses about 400 nm were deposited on the Si substrates by sol-gel method. The influence of surface morphology, optical and dielectric properties was mainly investigated. The diffraction pattern showed that the annealed films exhibited a polycrystalline microstructure, and the increase in grain size of BaTi5O11 thin films occurred with an increase in annealing temperature and the pH value. In addition, it was also showed that the porosity was increased with a higher preheating temperature and annealing temperature. These results indicate that the suitable processing parameters are beneficial to improve the microstructure, optical, dielectric and electrical performances of BaTi5O11 thin film.
机译:通过溶胶-凝胶法将单层厚度约为400 nm的BaTi5O11薄膜沉积在Si衬底上。主要研究了表面形态,光学和介电性能的影响。衍射图表明,退火后的膜表现出多晶的微观结构,并且随着退火温度和pH值的增加,BaTi5O11薄膜的晶粒尺寸增加。另外,还表明,随着较高的预热温度和退火温度,孔隙率增加。这些结果表明合适的工艺参数有利于改善BaTi5O11薄膜的微观结构,光学,介电和电性能。

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