Measurement of Oxide Film Resistance in Situ by Fabry-Perot Interferometry and DC Method

摘要

A combination of Fabry-Perot interferometry and the DC electrochemical method have been used for the first time, in situ, to measure the resistance of aluminium oxide films in 2% sulfuric acid solution. Values of the corresponding resistance of the obtained AI_2O_3 film thickness were determined during anodization of aluminium (Al) in 2% H_2SO_4. The obtained resistance values were verified by electrochemical impedance spectroscopy (EIS) and holographic interferometry. The corresponding resistance (2.4 ×10~9 Ohms) to the final thickness of the aluminum oxide film was found in an agreement with the resistance value that was measured by holographic interferometry, 2.54×10 Ohms, in 2% H_2SO_4. On the contrary, the corresponding resistance (2.4×10~9 Ohms) to the final thickness of the aluminumoxide film was found twice the value of the resistance that was measured by the electrochemical impedance spectroscopy (EIS), 1.25×10 Ohms, in 2% H_2SO_4.