Wide temperature range low drop output units realized with 250 nm 40 V BCD technology

机译：通过250 nm 40 V BCD技术实现的宽温度范围低压降输出单元

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5 V and 12 V embedded low drop output (LDO) units are designed as parts of Multi-Functional Power Converter Control Integrated Circuits (MFPCC IC) and fabricated using 250 nm 40 V BCD (Bipolar, CMOS, DMOS) technology. Measured LDO parameters are in agreement with designed parameters in the temperature operation range -40...+85°C. It has been shown that developed LDO units operate properly in a wide temperature range of -75°C...+ 150°C.

机译：5 V和12 V嵌入式低压降输出（LDO）单元被设计为多功能功率转换器控制集成电路（MFPCC IC）的一部分，并使用250 nm 40 V BCD（Bipolar，CMOS，DMOS）技术制造。在-40 ... + 85°C的温度工作范围内，测得的LDO参数与设计参数一致。事实证明，已开发的LDO单元可在-75°C ... + 150°C的宽温度范围内正常运行。

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《International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices》|2017年|477-480|共4页
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Igor K. Surin; Vladimir A. Ryzhkov; Vladislav Yu. Vasilyev;
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Integrated circuits; Voltage control; Regulators; Voltage measurement; Temperature measurement; Temperature dependence; Electron devices;

机译：集成电路;电压控制;调节器;电压测量;温度测量;温度依赖性;电子设备;

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Wide temperature range low drop output units realized with 250 nm 40 V BCD technology

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