首页> 外文会议>IEEE Workshop on Microelectronics and Electron Devices >High voltage tolerant stacked MOSFET in a Buck converter application
【24h】

High voltage tolerant stacked MOSFET in a Buck converter application

机译:降压转换器应用中的高压容耐堆叠MOSFET

获取原文
获取外文期刊封面目录资料

摘要

A Buck converter, created with a monolithic implementation of series connected MOSFETs at high-voltage, is presented. Using a single low-voltage control signal to trigger the bottom MOSFET in the series stack, a voltage division across parasitic and inserted capacitances in the circuit is used to turn on the entire stack of devices. The governing equations for the Stacked MOSFET are presented, and reliable operation for use in a Buck converter is presented in a 0.180 um Silicon-on-Insulator (SOI) CMOS process. The prototype is shown to handle 25 mA with a rail voltage of 3.3 V and a frequency range of 1–20 Megahertz.
机译:提出了一种带有在高压下的串联连接MOSFET的单片实施的降压转换器。 使用单个低压控制信号触发串联堆叠中的底部MOSFET,电路中寄生和插入电容的电压分配用于打开整个设备堆叠。 提出了堆叠MOSFET的控制方程,并且在0.180UM硅 - 绝缘体(SOI)CMOS工艺中呈现用于降压转换器的可靠操作。 原型显示为处理25 mA,轨道电压为3.3V,频率范围为1– 20兆赫兹。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号