Switching dynamics and computing applications of memristors: An overview

摘要

Memristors have acquired a lot of attention due to their potential applications in nonvolatile memory, reconfigurable logic, analog circuits and neuromorphic computing etc., and important progress has been made recently. Here we first shed light on the switching dynamics of oxide based memristors by electrostatic force microscopy (EFM). We further demonstrate a new type of vertical 3-terminal oxide based memristive device capable of implementing heterosynaptic plasticity. To address the long-standing issue of device variations in memristors limiting the construction of neuromorphic computing systems, we propose a fuzzy restricted Boltzmann machine (FRBM) network that can effectively tolerate device stochasticity. Finally, we show that nonvolatile Boolean logic can also be achieved in the same 3-terminal heterosynaptic devices in an efficient manner, compared with conventional 2-terminal memristors.