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Pulse Shaping System Research of CdZnTe Radiation Detector for High Energy X-ray Diagnostic

机译:用于高能X射线诊断的CdZnTe辐射探测器的脉冲整形系统研究

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As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time ι_(s-k). And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM). and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.
机译:作为典型的宽带隙半导体材料之一,CdZnTe材料对硬X射线和伽马射线具有很高的检测效率和出色的能量分辨率。 CdZnTe检测器产生的信号需要转换为脉冲宽度较小的伪高斯脉冲,以通过以下核光谱数据采集系统消除噪声并提高能量分辨率。本文基于核电子原理研究了多级伪高斯整形滤波器。在下面的仿真中,基于对伪高斯整形滤波器特性的分析,还获得了优化的电路参数。基于仿真结果,减少了输出脉冲的下降时间,并且可以在减少整形时间η_(s-k)的情况下获得更快的响应时间。当输入电阻的比率设置为1到2.5时,下冲也被消除。此外,通过使用低噪声电压反馈运算放大器LMH6628设计并制造了两级萨伦键高斯整形滤波器。利用精密脉冲发生器CAKE831作为模拟辐射脉冲,建立了与半导体CdZnTe探测器等效信号的探测实验平台。实验结果表明,两级伪高斯整形滤波器的输出脉冲具有最小200ns的脉冲宽度(FWHM)。各阶段的输出脉冲与仿真结果吻合良好。基于我们的实验性能,这种多级伪高斯整形滤波器可以减少CdZnTe半导体探测器中由于堆积引起的事件损失,并有效地提高能量分辨率。

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