Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering

摘要

Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.