This paper presents some real properties of the cross-coupled charge pump that is used in low-power microelectronic integrated systems operating with high voltage (FLASH, EEPROM memories). SC-circuits characterization and design aspects are firstly discussed. Theoretical analysis of the cross-coupled charge pump with accompanying equations has been done. Some real properties have been simulated by ELDO Spice and compared with these assumptions. Simulation results show discrepancy between calculation and simulated parameters due to significant pumping losses that have been discussed in detail. Discontinuity of the output voltage through input parameters is very important finding that complicates the development of the real model for design purposes.
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