A novel Ka-band GaN phase shifter for SATCOM phased-array antennas

摘要

A Ka-band phase shifter is a key component of phased array antennas for SatCom applications. By using GaN technology, large power handling capability and high frequency operation can be achieved. In this paper, a HEMT GaN switch using a metal gate of 0.15μm is designed at 30 GHz for signal levels up to 37 dBm. From this efficient GaN switch, a compact and innovative monolithic phase-shifter is proposed for Ka-band operation with a 2-bit phase resolution and attractive insertion loss, isolation and bandwidth performance.