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Memristor applied in delay locked loop for high lock speed and wide frequency range

机译:存储器在延迟锁定环路中应用延迟锁定速度和宽频范围

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Locking speed and operating frequency range of DLL is limited to the delays of its VCDL. Since memristor resistance changes according to external bias, memristor can be used as programmable resistor. In this paper, memristor is applied to VCDL as variable resistor where the memristor resistance regulates total delay of the VCDL. VCDL consists of current starved inverter as the delay unit. A voltage to current converter (VCC) is used to convert control voltage from capacitor, Vc to control current, Ic. The control current, Ic with memristor resistance generates new voltage, Vr that regulates the delay. Compared to conventional DLL, the proposed DLL design offers one more control parameter which is Vr. By applying memristor to the DLL, the control voltage Vc can be further manipulated. Simulation results show that proposed DLL with memristor has higher locking speed and can lock higher input frequency compared to conventional DLL without memristor. Therefore, higher locking speed and wide operating frequency range are both achievable by proposed DLL with memristor.
机译:DLL的锁定速度和工作频率范围仅限于其VCDL的延迟。由于映射器电阻根据外部偏置而改变,因此忆阻器可用作可编程电阻器。在本文中,忆阻器应用于VCDL,作为VCDL,其中忆阻电阻调节VCDL的总延迟。 VCDL由当前饥饿的逆变器作为延迟单元组成。电流转换器(VCC)的电压用于转换电容器VC的控制电压以控制电流IC。控制电流,具有忆阻电阻的IC产生新电压,VR调节延迟。与传统的DLL相比,所提出的DLL设计提供了一个更为vr的控制参数。通过将忆阻器施加到DLL,可以进一步操纵控制电压Vc。仿真结果表明,与Memristor的锁定速度提出了DLL,与没有Memristor的传统DLL相比,锁定速度较高,可以锁定更高的输入频率。因此,通过提出的DLL具有忆阻器,可以实现更高的锁定速度和宽的工作频率范围。

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