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Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation

机译:低电阻P型ZnO形成的N2和O2退火气体比的影响

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P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300 掳C for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 脳 10-3 驴.cm with a carrier concentration of 1.54 脳 1022 cm-3.
机译:通过编码方法实现了ZnO薄膜中的P型导通。通过DC磁控溅射在硅(111)基板上使用纯锌盘作为靶标并在300℃下进行热处理1小时,在硅(111)底板上制备ZnO薄膜。结果表明,CO掺杂的P型ZnO的电阻率最低为3.412≥10-3μ.cm,载体浓度为1.54×1022cm-3。

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