Analytical Method for Ultra-Low Power UWB Low-Noise Amplifiers

摘要

This paper presents a MOSFET model for ultra-low power radio-frequency integrated circuits (RFICs) design. In addition, we discussed the concept of the Operating Parameter (OP) as the main design parameter used to determine the operating point, from weak, via moderate, or strong inversion. The proposed OP based analytical model is applied to an LNA design (3–5 GHz) in 130 nm CMOS technology. Simulation results showed a minimum noise figure (NF) of 2.3 dB, max gain 9.6 dB and 0.25 mW power dissipation. The figure of merit (FoM) is found to be superior to previous design techniques.