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Robust manipulation of magnetism in dilute magnetic semiconductor (Ga, Mn)As by organic molecules

机译:有机分子对稀磁半导体(Ga,Mn)As中磁性的鲁棒控制

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We firstly demonstrated the organic molecular manipulation of the magnetism of (Ga, Mn)As. Mn-doped GaAs thin films with various thicknesses were grown by low-temperature molecular-beam epitaxy (LT-MBE), and organic charge-transfer molecules were deposited on the surface of (Ga, Mn)As films by either solution-based self-assembly or vacuum thermal evaporation, which led to large carrier density modulation, and significant changes in the Curie temperature (Tc) and magnetization (Ms). Electron donor (acceptor) molecules were found to decrease (increase) both Tc and Ms. Moreover, through proper preparation of the (Ga, Mn)As surface, self-assembled monolayer (SAM) patterns of organic molecules with sub-75 nanometer line width were successfully created via dip-pen nanolithography (DPN). These results could open a new pathway to control nano-scale manipulation of magnetism in DMS, with potential applications in reconfigurable, non-volatile and hybrid molecular nano-spintronics.
机译:我们首先证明了有机分子操纵(Ga,Mn)As的磁性。通过低温分子束外延(LT-MBE)生长具有各种厚度的Mn掺杂GaAs薄膜,并且通过两种基于溶液的自生膜将有机电荷转移分子沉积在(Ga,Mn)As膜的表面上-组装或真空热蒸发,导致大的载流子密度调制,以及居里温度(Tc)和磁化强度(Ms)发生显着变化。发现电子供体(受体)分子会同时降低(增加)Tc和Ms。此外,通过适当制备(Ga,Mn)As表面,可以制备出低于75纳米线的有机分子自组装单层(SAM)图案通过浸笔式纳米光刻(DPN)成功创建了宽度。这些结果可能会为控制DMS中磁性的纳米级控制开辟一条新途径,并在可重构,非易失性和混合分子纳米自旋电子学中具有潜在的应用。

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