Temperature Measurement of RF Power Amplifier

摘要

Nowadays, end users of power electronic converters require not only the best quality, excellent performance and high efficiency, but also, as the most important parameter, reliability [1]. In the case of power semiconductors, a very essential element of each power converter, the main stressor is junction temperature (maximum value and amplitude of temperature swing), since it greatly accelerates degradation mechanisms, which significantly reduces device lifetime [2]. These facts lead to the obvious conclusion that the temperature of power semiconductors should be measured during start-up and qualification testing of newly developed power supplies, to assess stress levels to which these critical components are subjected. In the case of power supplies operating at high power levels $(30_120 kW)$ and high frequencies $(4_13.56 {MHz})$ even simple temperature measurement becomes a challenge [3]. This paper presents the design process of a robust data logging system, immune to the presence of a heavily distorted electromagnetic field, and its performance in comparison to commercial solutions.