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A Bipolar Smart Power Synchronous Rectifier

机译:双极智能电源同步整流器

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摘要

As microelectronic systems voltages continue to drop towards 1V and below, the design and realisation of low cost high efficiency DC-to-DC power converters become increasingly problematic due to the small but finite forward voltage drop typically 0.4 - 0.5 V and consequent power loss incurred across the switching device typically a Schottky diode contained within the low-voltage output stage of the converter circuitry. Traditionally, in medium to low-voltage applications, replacement of the Schottky diode with a MOSFET based synchronous rectifier SR has proved an effective solution to the aforementioned problem. However, use of a synchronous rectifier requires additional control circuitry, which gives rise to an increase in both circuit complexity and cost. In this paper a novel bipolar based synchronous rectifier BiSync device design that overcomes many of the aforementioned difficulties is proposed. Fundamental modes of operation were verified using Silvaco TCAD simulations to demonstrate proof of concept. Results presented indicate that the final design can provide a substantially more compact and electrically efficient solution than a MOSFET based synchronous rectifier of equivalent area, while also being capable of manufacture using an industry standard bipolar transistor technology and suitable for use in medium-to-very-low voltage conversion applications.
机译:由于微电子系统的电压继续下降到1V,低成本高效的DC-DC功率转换器的设计和实现由于小而有限的正向电压降通常为0.4 - 0.5 V并导致的功率损失穿过开关装置,通常是包含在转换器电路的低压输出级内的肖特基二极管。传统上,在媒体到低压应用中,利用基于MOSFET的同步整流器SR更换肖特基二极管已经证明了上述问题的有效解决方案。然而,使用同步整流器需要额外的控制电路,这导致电路复杂度和成本增加。在本文中,提出了一种新颖的基于双极的同步整流器Bisync器件设计,克服了许多上述困难。使用Silvaco TCAD模拟验证了基本操作模式,以证明概念证明。提出的结果表明,最终设计可以提供比同等区域的同步整流器的MOSFET基本更紧凑和电气有效的解决方案,同时还能够使用行业标准双极晶体管技术制造,并适合于中的中等使用 - 电压转换应用。

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