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A 150nW 32 kHz mobility-compensated relaxation oscillator with +/???30ppm/??C temperature stability

机译:一个150nW 32 kHz迁移率补偿的弛豫振荡器,具有+ / ??? 30ppm /?C温度稳定性

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A relaxation oscillator is presented that makes use of a current-mode Schmitt trigger to reduce the effects of process, voltage and temperature (PVT) variations. A detailed analysis of the oscillator, including the temperature performance, is presented and verified by experimental results. A test chip with a typical frequency of 32 kHz was fabricated in a 0.18 ??m standard CMOS process. The measured frequency variations were +/??? 30 ppm/??C for temperature variation from ???20 ??C to 80??C and +/??? 500 ppm/V for supply voltage variation from 0.7 V to 1.8 V. The short term stability is 66 ppm (2 ns) of jitter while the long term stability is 500 ppm of Allan deviation after 10 seconds. A careful design results in a total area of 0.1 mm2 and a power consumption of 150 nW.
机译:提出了一种弛张振荡器,该弛张振荡器利用电流模式施密特触发器来减小过程,电压和温度(PVT)变化的影响。给出了振荡器的详细分析,包括温度性能,并通过实验结果进行了验证。在0.18?m标准CMOS工艺中制造了典型频率为32 kHz的测试芯片。测得的频率变化为+ / ???温度从20°C到80°C以及+ / 25°C时,为30 ppm /ΔC。电源电压在0.7 V至1.8 V之间变化时为500 ppm / V。短期稳定性为66 ppm(2 ns)抖动,而长期稳定性为10秒后Allan偏差为500 ppm。精心设计会导致总面积为0.1 mm2,功耗为150 nW。

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