0.3 V supply, 17 ppm/??C 3-transistor picowatt voltage reference

摘要

In this work a novel resistorless MOSFET 3-transistor voltage reference that operates in the picowatt range and occupies very small area is proposed. The circuit is based on a self-cascode structure that is biased in subthreshold condition using the leakage current provided by a reverse biased MOSFET diode. Its electrical behavior is analytically described and a design methodology is presented to allow the transistors sizing for optimal temperature compensation. Simulation results for a standard 130 nm CMOS process are presented to validated the proposed circuit topology. A reference voltage of 85 mV is obtained with a temperature coefficient (TC) of 17.4 ppm/??C and consuming only 7 pW under 0.3 V of power supply at room temperature. Monte Carlo analysis shows that the reference voltage ??/??< 3.3% and that 90% of the samples present TC<50 ppm/??C without trimming.