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A CAD-oriented simulation methodology for memristive circuits

机译:面向CAD的忆阻电路仿真方法

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With the fabrication of the nanometric memristor in 2008, a large number of applications in electronic design have been devised for the new device. Despite the current problems involved in its fabrication, the memristor is considered to be the basic circuit cell for the development of modern electronic systems. Unquestionably, it is necessary to develop circuit design verification methodologies and CAD tools for circuits containing memristors as well as traditional electronics. In this paper, we present a circuit simulation methodology for the electrical simulation of memristive circuits. The methodology results in a nonlinear constitutive branch relationship for the memristor that can be straightforwardly combined with models for traditional components in a standard industry package for electrical simulation.
机译:随着2008年纳米忆阻器的制造,新器件已经在电子设计中得到了大量应用。尽管制造过程中存在当前的问题,但忆阻器仍被认为是现代电子系统发展的基本电路单元。毫无疑问,有必要为包含忆阻器以及传统电子器件的电路开发电路设计验证方法和CAD工具。在本文中,我们提出了一种用于忆阻电路电气仿真的电路仿真方法。该方法产生了忆阻器的非线性本构分支关系,可以直接将其与标准行业软件包中的传统组件模型组合在一起,以进行电气仿真。

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