Optical emission of silicon plasma induced by femtosecond double-pulse laser

摘要

In this paper, we present a study on the influence of interpulse delay in laser-induced silicon plasma with femtosecond double-pulse, and two subpulses have different laser energies. The optical emission line collected by a lens is the Si (I) at 390.55 nm. The range of double-pulse interpulse delay is from -150 ps to 150 ps. Unlike the femtosecond double pulses with two same energies, the combination of low + high energies can enhance the spectral emission intensity, while the combination of high + low energies probably reduces the spectral line intensity compared with single-pulse femtosecond laser. The results indicate that the interpulse delay is very important for laser-induced breakdown spectroscopy with femtosecond double-pulse to improve the optical emission intensity.