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20″ × 20″ panel size glass substrate manufacturing for 2.5D SiP application

机译:适用于2.5D SiP应用的20“×20”面板尺寸玻璃基板制造

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For high density interconnection IC packages of the future, the outlook is for thinner packages with higher routing densities. With that, managing the substrate warpage along processing steps becomes critical. Thin organic substrates face challenging warpage issues in manufacture and in chip assembly. Glass is one of the candidates that can be used in substrate to replace traditional organic substrate. The infrastructure of glass for LCD industry has already been developed for many years. Glass also has several superior properties than other substrate candidates, such as large panel size availability, adjustable CTE, high modulus, low dielectric constant, low dielectric loss and high insulating capability. Glass represents an attractive choice with potential of tailorable properties dependent on specific glass composition. By targeting the coefficient of thermal expansion (CTE), the CTE of glass can be made to match perfectly with silicon dies and for reliable package. In addition, the advantages of using glass for interposer derive from process flexibility for size and thickness since the glass fusion process provides sheets with dimensions of more than three meters. It is straight forward to provide glass substrate of almost any size needed. Large glass panels are ideally suited for fabrication of interposer where the panel process is expected to provide large number of interposers in each run compared with wafer processing. In addition, the two sided processing of the panel, the avoidance of CMP processes and without using liners further enable lower unit cost for the interposer. This paper demonstrates fabrication of glass interposer with through glass vias (TGV) daisy chain test vehicles using a 20” x 20” (508mm x 508mm) panel size glass substrate manufactured by substrate HVM (high volume manufacture) line for 2.5D SiP application. Daisy chain electrical measurement results of this glass substrate demonstrated good continuity and electric resi- tance. The reliability test results will also be described including pre-condition and thermal cycle test (TCT).
机译:对于未来的高密度互连IC封装,展望是具有更高布线密度的更薄封装。这样,在处理步骤中管理基板翘曲就变得至关重要。薄有机基板在制造和芯片组装中面临着具有挑战性的翘曲问题。玻璃是可用于基材中以替代传统有机基材的候选材料之一。 LCD工业用玻璃的基础设施已经开发了很多年。玻璃还具有比其他候选基材更好的性能,例如大尺寸的面板尺寸,可调节的CTE,高模量,低介电常数,低介电损耗和高绝缘能力。玻璃代表了一种有吸引力的选择,它具有取决于特定玻璃组成的可定制属性的潜力。通过瞄准热膨胀系数(CTE),可以使玻璃的CTE与硅管芯完美匹配并实现可靠的封装。另外,将玻璃用作中介层的优点来自于尺寸和厚度的工艺灵活性,因为玻璃熔融工艺可提供尺寸超过三米的片材。直接提供几乎任何所需尺寸的玻璃基板都是很简单的。大型玻璃面板非常适用于中介层的制造,在这种情况下,与晶圆加工相比,面板工艺有望在每次运行中提供大量的中介层。此外,面板的双面处理,避免了CMP工艺并且无需使用衬板,进一步降低了中介层的单位成本。本文演示了使用玻璃通孔(TGV)菊花链测试车制造的玻璃中介层,该测试车使用20英寸x 20英寸(508毫米x 508毫米)面板尺寸的玻璃基板,该基板由基板HVM(大批量生产)生产,用于2.5D SiP应用。该玻璃基板的菊花链电测量结果显示出良好的连续性和电阻。还将对可靠性测试结果进行描述,包括前提条件测试和热循环测试(TCT)。

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