CHANGING OF THE PARAMETERS OF THE 'THREE-DIODE MODEL' BY LIGHT-INDUCED DEGRADATION AT DIFFERENT DEGRADATION TEMPERATURES OF a-Si/μc-Si SOLAR CELLS

摘要

In this paper we observe the behavior of amorphous/microcrystalline (a-Si/μc-Si) tandem silicon-based solar cells before and after light-induced degradation. We show a method of extracting the parameters of the "three-diode model" during light-induced degradation. The "three-diode model" describes the tandem layout of the amorphous (a-Si) and the microcrystalline (μc-Si) silicon-based thin film solar cells: a-Si is described by the one-diode model, the μc-Si by the two-diode model. Both solar cells are connected in series. By this series connection, the three-diode model can be used to describe the cell. In our presented work we show the changing of the parameters of each diode model during the light-induced degradation at different degradation temperatures (30°C, 50°C and 70°C).