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Al-DOPED ZnO NANOSTRUCTURED ELECTRODES FOR SMALL MOLECULE ORGANIC SOLAR CELLS

机译:Al掺杂的ZnO纳米结构电极,用于小分子有机太阳能电池

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The effect of Al incorporation into the ITO/i-ZnO seed layer (i-ZnO-SL)/ZnO-nanorods (ZnO-NRs) stack applied as electrode in organic solar cells is investigated. ZnO-NRs were prepared by electrochemical deposition in the presence of an Al-precursor with varied concentrations onto ITO substrates covered with a sputtered intrinsic ZnO seed layer. In a second step, the i-ZnO-SL was replaced by a sputtered ZnO:Al seed layer (ZnO:Al-SL). The effect of Al incorporation into both ZnO(Al)-NRs and ZnO:Al-SLs is tested on solar cells with a C_(60)/ZnPc:C_(60) active layer stack on top of nanostructures. With increasing the Al-precursor concentration in the electrochemical bath, beside the growth of ZnO-NRs, an additional formation of ZnO(Al)-"nanosheets" is detected. Lower shunt resistances of photovoltaic devices with nanosheets were observed pointing to creation of shunting pathways. Thus, the presence of nanosheets resulted in solar cell devices with reduced PV parameters compared to Al-free prepared ZnO-NRs. In contrast to i-ZnO-SLs, ZnO:Al-SLs clearly improve the device performance demonstrating the potential of the ITO/ZnO:Al-SL/ZnO(Al)-nanostructure stack as highly structured electrode.
机译:研究了Al掺入有机太阳能电池中用作电极的ITO / i-ZnO种子层(i-ZnO-SL)/ ZnO-纳米棒(ZnO-NRs)的影响。 ZnO-NRs是通过在浓度变化的Al前驱体存在下,通过电化学沉积法制备到覆盖有溅射本征ZnO籽晶层的ITO基板上而制备的。在第二步中,将i-ZnO-SL替换为溅射的ZnO:Al种子层(ZnO:Al-SL)。在具有在纳米结构顶部的C_(60)/ ZnPc:C_(60)活性层堆叠的太阳能电池上测试了Al掺入ZnO(Al)-NRs和ZnO:Al-SLs中的影响。随着ZnO-NRs的生长,随着电化学浴中Al前体浓度的增加,还检测到ZnO(Al)-“纳米片”的另外形成。观察到具有纳米片的光伏装置的较低分流电阻,这表明产生了分流通路。因此,与无铝制备的ZnO-NRs相比,纳米片的存在导致太阳能电池器件的PV参数降低。与i-ZnO-SLs相比,ZnO:Al-SLs明显改善了器件性能,证明了ITO / ZnO:Al-SL / ZnO(Al)-纳米结构堆栈作为高度结构化电极的潜力。

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