Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

摘要

In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique for in-line strain metrology.