Features of Hgx−1CdxTe anodic sulfdization

摘要

Processes of thin sulfde layers on HgCdTe surface formation by anodic sulfdization were investigated in this work. 0.1M NaS in ethylene glycol solution was used as an electrolyte. Potentiodynamic curves obtained do not correspond with expected ones from literature [1], but qualitatively represent electrochemical processes occurring — formation of cadmium, tellurium and mercury sulfdes. Galvanostatic dependencies verify formation of non-insulating flms a composition of which depends on anodization duration. Analysis of the surface chemical composition by XPS has shown that the main components of sulfde flms formed are cadmium and mercury sulfdes, with tellurium sulfde nearly absenting. The model of sulfde layer formation based on experimental data obtained has been proposed. Voltage-current (I-V) characteristics of Au-native sulfde-HgCdTe structures being rectifying were obtained and analyzed.