A solar cell, based on the epitaxial layers of A^IIIB^V compounds, transferred from the substrate onto the flexible polymeric carrier

摘要

An inverted GaAs solar cell structure has been grown with the MBE method. Together with the substrate, the structure was glued to a polymer film of polyethylene terephthalate (PET film) by means of epoxy resin. After the removal of the substrate, the contact platforms were created and the light window was opened. Research of the solar cell photovoltaic properties was conducted at non-concentrated sunlight with the AM 1.5D spectrum. The obtained effciency equal to 16.65%, taking into consideration the absence of the antireflection coating and a grid of contacts on the face of the solar cell, says about its high degree of efficiency.