Geant4 simulations of semiconductor detectors (SiC) for fast neutron spectroscopy

摘要

A proton recoil method along with Silicon Carbide semiconductor detector is presented in this paper. It consist of hydrogenous converter layer to generate recoil protons by means of neutron elastic scattering (n, p) reaction and radiation hard semiconductor material (Silicon Carbide) layer to generate detectable electrical signal upon transport of recoil protons through it. Converter layer thickness is optimized for different monoenergetic and standard neutron sources using Monte Carlo based Geant4 simulation toolkit, in order to facilitate the study of detector characteristics in greater detail.