Nonlinear modelling of GaN transistors: Behavioural and analytical approaches

摘要

Gallium Nitride (GaN) transistors are increasingly attracting the attention of the microwave research community due to their performance in terms of power density and frequency capabilities. As a matter of fact, GaN is considered as the leading technology for future telecom and space applications. Nevertheless, nonlinear modelling of GaN transistors is still an open issue that continuously poses new challenges. In this paper, the comparison between two models, based on behavioural and analytical approaches, will be deeply discussed with the aim of pointing out advantages and disadvantages of each modelling technique.