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Transition metal doped metal oxide nanostructures synthesized by arc discharge method

机译:通过电弧放电方法合成的过渡金属掺杂金属氧化物纳米结构

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Doping metal oxides with metallic impurities has been the subject of previous studies for enhanced sensing performance. In this paper, we present a review on syntheses of transition metal doped metal oxide nanostructures using arc discharge method. Tungsten oxide was doped with Palladium, Scandium and Vanadium, respectively. Nickel was chosen to dope Zinc oxide by arc discharge method. It is demonstrated that dopants not only change the morphology of metal oxide nanostructures but also help to achieve an improved electrical conductivity. Because it is easy to tailor the morphology by adjusting the arc discharge parameters and dopant can be prescribed in the preparation of the anode material, the arc discharge is considered to be a fast and inexpensive synthesis method for doping which can be used to produce high quality doped metal oxide nanostructures for chemical sensing measurements.
机译:具有金属杂质的掺杂金属氧化物是先前研究的主题,用于增强感测性能。本文使用电弧放电方法对过渡金属掺杂金属氧化物纳米结构的合成介绍了综述。氧化钨分别掺杂有钯,钪和钒。选择镍通过电弧放电方法选择掺杂氧化锌。证明掺杂剂不仅改变金属氧化物纳米结构的形态,而且有助于实现改善的电导率。因为通过调节电弧放电参数易于定制形态,并且可以在制备阳极材料的制备中规定掺杂剂,所以电弧放电被认为是一种用于掺杂的快速和廉价的合成方法,可用于产生高质量用于化学传感测量的掺杂金属氧化物纳米结构。

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