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Assessment of SiC diode performance in non-isolated converters for LED lighting applications

机译:评估用于LED照明应用的非隔离式转换器中SiC二极管的性能

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Today SiC Schottky diodes are becoming less expensive and more affordable in the market of electronic components. However, the price is still higher in comparison with common fast and ultrafast diodes with the same current and voltage rating. The main aim of this research is to find are the SiC diodes more advantageous in non-isolated converters for LED applications. From the one side SiC diodes have extremely fast reverse recovery time (reduced switching losses), from the other side they have higher forward voltage drop (higher conduction losses). In this case the evaluation of loss distribution between the conduction and switching losses is very important. This distribution may vary depending on topology, input-to-output voltage radio and output power. Several topologies are considered in the scope of this article: the most commonly used conventional buck topology, buck-boost topology and tapped-inductor topology.
机译:如今,SiC肖特基二极管在电子元件市场上正变得越来越便宜,越来越便宜。但是,与具有相同额定电流和电压的普通快速和超快二极管相比,价格仍然更高。这项研究的主要目的是发现SiC二极管在非隔离式LED转换器中更具优势。一方面,SiC二极管具有极快的反向恢复时间(降低了开关损耗),另一方面,它们具有更高的正向压降(更高的传导损耗)。在这种情况下,评估传导损耗和开关损耗之间的损耗分布非常重要。此分布可能会根据拓扑,输入到输出电压无线电和输出功率而变化。本文范围内考虑了几种拓扑:最常用的常规降压拓扑,降压-升压拓扑和抽头电感器拓扑。

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