An effective conductance cancellation method with minimal design effort

摘要

An easy-to-implement conductance cancellation method is proposed. To be specific, the only design work involved in the proposed method is to size a transistor in the negative conductance of the NMOS side. In addition, without the aid of any tuning or calibration circuit and under all process corners, the method is able to maintain a DC gain enhancement of over 28.9dB under temperatures between −40 and 80°C, of over 27.6dB under supply voltage between 1.4V and 2V, and of over 29dB under differential output swing between −1.1V and 1.1V. Furthermore, the power and area overhead of the method are respectively only 7% and 3% of those of conventional op amps.