High uniformity and high speed copper pillar plating technique

摘要

In this work we report the application of the selective wet processing technique based on dynamic liquid meniscus for copper pillar bumps (CPB) plating. The industrial plating of copper for CPB process is typically carried out at 2 μm/min. A much higher copper deposition rate is necessary to improve throughput for this process. To achieve higher deposition rates of copper the hydrodynamic issue that is natural for all conventional plating baths processes must be solved. A number of solutions is proposed towards realization of high speed and high throughput CPB plating process. Uniformity of copper pillar over a 6-inches silicon wafer is presented and the morphology and shapes of pillars are investigated by scanning electron microscopy (SEM). Copper pillar height and dimension are investigated within different topology over the wafer showing the robustness of the process for the thickness uniformity. Preliminary investigation of the CPB plating shows the uniformity of better than 2 % within 6” silicon wafer.