Copper metallization of silicon PERL solar cells: 21 cell efficiency and module assembly using conductive film

摘要

We present updated results of our research on the p-type silicon PERL solar cells with plated Ni/Cu/Ag or Ni/Ag contacts, AlO rear passivation, and screen-printed local Al BSF. Large-area cells prepared on 156 mm commercial-grade boron-doped Cz Si wafers show maximum 21.4% conversion efficiency, and maximum 675 mV open-circuit voltage. Modules were successfully assembled by bonding inter-connect ribbon wires on the cells with conductive film. Accelerated reliability tests show that our Ni seed layer is an effective barrier against Cu diffusion. We present our cost-effectiveness calculations for the Cu plating metallization and discuss the requirements for it to penetrate the mainstream market.