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One step synthesis of SnO2-RGO nanocomposite by thermal evaporation and its field emission study

机译:热蒸发一步合成SnO 2 -RGO纳米复合材料及其场致发射研究

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SnO2-RGO nanocomposite has been synthesized by thermal evaporation method in a single step and its field emission (FE) properties are investigated. at the base pressure 1×10−8 mbar is reported. Prior to the FE studies, the synthesized SnO2-RGO nanocomposite is characterized using XRD, SEM and TEM to reveal its structural properties. The SnO2-RGO nanocomposite emitter is found to deliver a current density ∼100 µA/cm2 at an applied electric field of ∼ 9.2 V/µm. Moreover, the nanocomposite shows fairly good emission stability without significant degradation of emission current. The FE results seem to be encouraging, indicative of potential candidature of the SnO2-RGO nanocomposite emitter as an electron source for practical applications in vacuum nanoelectronic devices, upon further optimization of morphology.
机译:SnO2-RGO纳米复合材料是通过热蒸发法一步合成的,并研究了其场发射性能。在基本压力下报告为1×10-8 mbar。在进行FE研究之前,使用XRD,SEM和TEM对合成的SnO2-RGO纳米复合材料进行表征,以揭示其结构特性。发现SnO2-RGO纳米复合发射极在约9.2 V / µm的施加电场下可提供约100 µA / cm2的电流密度。此外,纳米复合材料显示出相当好的发射稳定性,而发射电流没有显着降低。 FE结果似乎令人鼓舞,表明在进一步优化形态后,SnO2-RGO纳米复合材料发射体作为真空纳米电子器件实际应用中的电子源的潜在候选资格。

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