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Design and Analysis of A New GaN-Based AC/DC Topology for Battery Charging Application

机译:用于电池充电应用的新GAN的AC / DC拓扑设计与分析

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Gallium nitride (GaN) technology reduces switching losses and allows faster device switching speeds. Meanwhile, high frequency (HF) transformers feature reduced weight and size for many applications. In this paper a new GaN-based power supply topology for battery charging applications is designed, simulated, analyzed, and constructed. The proposed topology is designed for 120Vac to 48Vdc/60Vdc conversion, operating at 100 KHz in the 1.3-1.5 kW range. A totem-pole power-factor-correction (TP-PFC) active front-end is utilized to yield close-to-unity power factor (~0.98) and higher efficiency with reduced harmonic content. This work designs and analyzes a new topology to combine the advantages of GaN TP-PFC and a high-frequency series resonant converter (SRC) with current doubler rectifier (CDR) utilizing the superior switching characteristics of GaN devices and the reduced size and cost of HF transformer. A loss-free resistor model is used to determine keys steady state and the main characteristics of the proposed topology.
机译:氮化镓(GaN)技术可降低开关损耗并允许更快的设备开关速度。同时,高频(HF)变压器具有许多应用的重量和尺寸减轻。本文设计了一种新的GaN的电池充电应用的电源拓扑,设计,模拟,分析和构造。所提出的拓扑结构设计为120VAC至48VDC / 60VDC转换,在1.3-1.5千瓦范围内以100kHz运行。图腾柱功率因数校正(TP-PFC)有源前端被利用,以产生近于单位功率因数(〜0.98)和具有降低的谐波含量更高的效率。该工作设计并分析了一种新的拓扑,将GaN TP-PFC和高频串联谐振转换器(SRC)的优点与电流倍增器整流器(CDR)利用GaN设备的卓越开关特性和减少尺寸和成本HF变压器。无损耗的电阻模型用于确定键稳态和所提出的拓扑的主要特征。

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