CMOS integrated circuits; UHF amplifiers; integrated circuit design; low noise amplifiers; low-power electronics; microwave amplifiers; wireless LAN; LC tank resonators; WLAN; complementary metal-oxide semiconductor; current 2.3 mA; frequency 2.4 GHz; frequency 5.2 GHz; gain 10 dB; input transistor; low-noise amplifier; low-power CMOS low noise amplifier design; noise figure 3.2 dB; noise figure 3.5 dB; size 0.18 mum; source-degenerated topology; switched external capacitor; voltage 1 V; wireless local-area network; CMOS integrated circuits; Dual band; Impedance matching; Inductors; Low-noise amplifiers; Switching circuits; Transistors; Complementary metal-oxide semiconductor; Dual-band; Low-noise amplifier; Wireless local-area network;
机译:低功耗,高增益,低噪声5-6 GHz CMOS低噪声放大器,具有出色的反向隔离性能,适用于IEEE 802.11 n / ac WLAN应用
机译:低功耗,高增益,低噪声5-6 GHz CMOS低噪声放大器,具有出色的反向隔离性能,适用于IEEE 802.11 n / ac WLAN应用
机译:适用于0.18μmCMOS技术中WLAN应用的3mW并行2.4 / 5.2GHz双频低噪声放大器
机译:设计双频电源CMOS低噪声放大器,可用于WLAN应用程序
机译:用于WLAN应用的5.8 GHz CMOS低噪声放大器。
机译:具有可调范围CMOS延迟锁定环路的亚皮秒抖动设计适用于高速和低功耗应用
机译:用于神经记录应用的低功耗,低噪声CMOS放大器