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Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

机译:980nm高功率单发射器中散装和小平面故障的多光谱调查

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摘要

Failed high-power InGaAs/AlGaAs single emitters at 980 nm are investigated using laser-ablated windows on the substrate side. Both bulk and facet failures are analyzed with electroluminescence imaging, near and mid-IR spectroscopy, and FIB/SEM microscopy.
机译:使用激光烧蚀窗口在衬底侧使用980nm处的高功率Ingaas / Algaas单个发射器。用电致发光成像,近IR光谱和FIB / SEM显微镜分析散装和面部故障。

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