首页> 外文会议>IEEE International Conference on Electronics, Circuits and Systems >A 0.8 -3.4 GHz, Low-Power and Low-noise RF-to-BB-Current-Reuse Receiver Front-End for Wideband Local and Wide-area IoT Applications
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A 0.8 -3.4 GHz, Low-Power and Low-noise RF-to-BB-Current-Reuse Receiver Front-End for Wideband Local and Wide-area IoT Applications

机译:一个0.8 -3.4 GHz,低功耗和低噪声RF-to-BB-Current-Recuesiver前端用于宽带本地和广域IOT应用

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A low-noise, low-power and wideband RF-to-baseband (BB)-current-reuse quadrature (I/Q) receiver frontend using an active-inductor (AI) technique is proposed to support several local and wide-area wireless standards from 0.8 GHz to 3.4 GHz. To achieve low-power, a single supply and de bias current are shared between a low-noise transconductance amplifier (LNTA) and a transimpedance amplifier (TIA). A double-balanced current driven passive mixer with a 25% duty-cycle local oscillator (LO) to enhance the overall performance are used. To improve the gain and noise performance of the receiver, a high impedance AI is employed to isolate the RF signal path from the output node and BB signal that allows the receiver to operate at higher frequencies with minimum degradation. A gm -boosted capacitive cross-coupled common-gate (CCC-CG) LNTA topology is employed to enhance input-matching, gain and NF without consuming extra power. The proposed receiver is implemented in 130-nm TSMC CMOS process and occupies an active area of 0.025 mm2. In the default current setting, at an 4 MHz intermediate-frequency (IF) and a 2.4 GHz radiofrequency (RF), it achieves a voltage gain of 39.5 dB, a double-sideband (DSB) noise figure (NF) of 2.6 dB, $S$11of less than -15dB and an IIP3 of -28dBm while consuming 1.6mA from 1.2 V supply voltage.
机译:一种低噪声,低功率和宽带RF到基带(BB) - 电流重用正交(I / Q)使用的有源电感器接收机前端(AI)技术,提出了支持多个本地和广域无线从0.8 GHz到3.4 GHz的标准。为了实现低功耗,单电源和DE偏置电流是低噪声跨导放大器(LNTA)和跨阻抗放大器(TIA)之间共享。以25%占空比的本地振荡器(LO)双平衡电流驱动无源混频器,以提高整体性能的使用。为了提高接收器的增益和噪声性能,一个高阻抗的AI被用来从输出节点和BB信号,即允许接收机在具有最小退化更高的频率下操作的RF信号路径隔离。 A G m -boosted电容交叉耦合共栅极(CCC-CG)LNTA拓扑用于增强输入匹配,增益和NF而不消耗额外的功率。所提出的接收器在130纳米TSMC CMOS工艺实现,并占据为0.025mm的有源区 2 。在缺省电流设置,在一个4兆赫中频(IF)和2.4GHz的射频(RF),它达到39.5分贝,双边带(DSB)的噪声系数的2.6(NF)分贝电压增益, $ s $ 11 小于-15dB的和在从1.2 V电源电压消耗1.6毫安一个-28dBm的IIP3。

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