Feasibility Study of Ebullient Cooling Technology for SiC Power Devices With Extremely High Heat Generation Density of 1000 W/cm2

摘要

A feasibility study of ebullient cooling has been performed to increase the thermal performance of SiC power module. A porous Cu block as an evaporator was assembled with silicon-nitride substrate with a SiC-MOSFET. It was confirmed that an extremely high heat generation density of 963 W/cm^{2 was stably removed from the power device with the surface temperature of 282 degree Celsius.}